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Semiconductors

, Volume 32, Issue 1, pp 1–14 | Cite as

The history and future of semiconductor heterostructures

  • Zh. I. Alferov
Review

Abstract

The history of the development of semiconductor heterostructures and their applications in various electron devices is presented, along with a brief historical survey of the physics, production technology, and applications of quantum wells and superlattices. Advances in recent years in the fabrication of structures utilizing quantum wires and especially quantum dots are discussed. An outline of future trends and prospects for the development and application of these latest types of heterostructures is presented.

Keywords

Magnetic Material Electron Device Electromagnetism Production Technology Late Type 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    V. P. Zhuze and B. V. Kurchatov, Zh. Éksp. Teor. Fiz. 2, 309 (1932); V. P. Zhuze and B. V. Kurchatov, Phys. Z. Sowjetunion 2, 463 (1932).Google Scholar
  2. 2.
    Ya. I. Frenkel and A. F. Ioffe, Phys. Z. Sowjetunion 1, 60 (1932).Google Scholar
  3. 3.
    Ya. I. Frenkel’, Phys. Rev. 37, 17 (1931); Phys. Rev. 37, 1276 (1931); Zh. Éksp. Teor. Fiz. 6, 647 (1936).ADSGoogle Scholar
  4. 4.
    E. F. Gross and N. A. Kariev, Dokl. Akad. Nauk SSSR 84, 261 (1952); E. F. Gross and N. A. Kariev, Dokl. Akad. Nauk SSSR 84, 471 (1952).Google Scholar
  5. 5.
    B. I. Davydov, Zh. Éksp. Teor. Fiz. 9, 451 (1939).zbMATHGoogle Scholar
  6. 6.
    N. H. Welker, Z. Naturforsch. 7 a, 744 (1952); Z. Naturforsch. 8 a, 248 (1953).Google Scholar
  7. 7.
    N. A. Goryunova, Author’s Abstract of Dissertation [in Russian] (LGU, FTI, 1951); A. I. Blyum, N. P. Mokrovskii, and A. R. Regel’, in Proceedings of the Seventh Conference on the Properties of Semiconductors [in Russian], Izv. Akad. Nauk Ser. Fiz. 16, 139 (1952).Google Scholar
  8. 8.
    W. Shockley, U.S. Patent 2,569,347 (September 25, 1951).Google Scholar
  9. 9.
    A. I. Gubanov, Zh. Tekh. Fiz. 20, 1287 (1950); Zh. Tekh. Fiz. 21, 304 (1951).Google Scholar
  10. 10.
    H. Kroemer, Proc. IRE 45, 1535 (1957); RCA Rev. 28, 332 (1957).Google Scholar
  11. 11.
    Zh. I. Alferov and R. F. Kazarinov, Inventor’s Certificate No. 181737 [in Russian], Application No. 950840, priority as of March 30, 1963; H. Kroemer, Proc. IEEE 51, 1782 (1963).Google Scholar
  12. 12.
    Zh. I. Alferov, V. B. Khalfin, and R. F. Kazarinov, Fiz. Tverd. Tela (Leningrad) 8, 3102 (1966) [Sov. Phys. Solid State 8, 2480 (1966)].Google Scholar
  13. 13.
    Zh. I. Alferov, Fiz. Tekh. Poluprovodn. 1, 436 (1967) [Sov. Phys. Semicond. 1, 358 (1967)].Google Scholar
  14. 14.
    L. Anderson, IBM J. Res. Dev. 4, 283 (1960); Solid-State Electron. 5, 341 (1962).Google Scholar
  15. 15.
    G. Natta and L. Passerini, Gazz. Chim. Ital. 58, 458 (1928); V. M. Goldschmidt, Trans. Faraday Soc. 25, 253 (1929).Google Scholar
  16. 16.
    Zh. I. Alferov, D. Z. Garbuzov, V. S. Grigor’eva, Yu. V. Zhilyaev, L. V. Kradinova, V. I. Korol’kov, E. P. Morozov, O. A. Ninua, E. L. Portnoi, V. D. Prochukhan, and M. K. Trukan, Fiz. Tverd. Tela (Leningrad) 9, 279 (1967) [Sov. Phys. Solid State 9, 208 (1967)].Google Scholar
  17. 17.
    Zh. I. Alferov, Yu. V. Zhilyaev, and Yu. V. Shmartsev, Fiz. Tekh. Poluprovodn. 5, 196 (1971) [Sov. Phys. Semicond. 5, 174 (1971)].Google Scholar
  18. 18.
    Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, D. N. Tret’yakov, and V. M. Tuchkevich, Fiz. Tekh. Poluprovodn. 1, 1579 (1967) [Sov. Phys. Semicond. 1, 1313 (1967)]; H. S. Rupprecht, J. M. Woodall, and G. D. Pettit, Appl. Phys. Lett. 11, 81 (1967).Google Scholar
  19. 19.
    Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, Fiz. Tekh. Poluprovodn. 2, 1016 (1968) [Sov. Phys. Semicond. 2, 843 (1968)].Google Scholar
  20. 20.
    Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, Fiz. Tekh. Poluprovodn. 2, 1545 (1968) [Sov. Phys. Semicond. 2, 1289 (1968)].Google Scholar
  21. 21 a).
    Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and D. N. Tret’yakov, in Proceedings of the Ninth International Conference on Semiconductor Structures, Moscow, July 23–29, 1968, Vol. 1 [in Russian] (Nauka, Leningrad, 1969), p. 534; b) Zh. I. Alferov, in Proceedings of the International Conference on Luminescence, Newark, Delaware, August 25–29, 1969, J. Lumin. 1, 869 (1970); c) Zh. I. Alferov, D. Z. Garbuzov, E. P. Morozov, and E. L. Portnoi, Fiz. Tekh. Poluprovodn. 3, 1054 (1969) [Sov. Phys. Semicond. 3, 885 (1969)]; d) Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and A. A. Yakovenko, Fiz. Tekh. Poluprovodn. 3, 541 (1969) [Sov. Phys. Semicond. 3, 460 (1969)].Google Scholar
  22. 22.
    Zh. I. Alferov, V. M. Andreev, E. L. Portnoi, and M. K. Trukan, Fiz. Tekh. Poluprovodn. 3, 1328 (1969) [Sov. Phys. Semicond. 3, 1107 (1969)].Google Scholar
  23. 23.
    Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, E. L. Portnoi, and A. A. Yakovenko, Fiz. Tekh. Poluprovodn. 930 (1966) [Sov. Phys. Semicond. 3, 785 (1966)].Google Scholar
  24. 24.
    Zh. I. Alferov, V. M. Andreev, M. V. Kagan, I. I. Protasov, and V. G. Trofim, Fiz. Tekh. Poluprovodn. 4, 2378 (1970) [Sov. Phys. Semicond. 4, 2047 (1970)].Google Scholar
  25. 25.
    Zh. I. Alferov, F. A. Akhmedov, V. I. Korol’kov, and V. G. Nikitin, Fiz. Tekh. Poluprovodn. 7, 1159 (1973) [Sov. Phys. Semicond. 7, 780 (1973)].Google Scholar
  26. 26.
    Zh. I. Alferov, V. M. Andreev, V. I. Korol’kov, V. G. Nikitin, and A. A. Yakovenko, Fiz. Tekh. Poluprovodn. 4, 578 (1970) [Sov. Phys. Semicond. 4, 481 (1970)].Google Scholar
  27. 27.
    I. Hayashi, IEEE Trans. Electron Devices ED-31, 1630 (1984).Google Scholar
  28. 28.
    Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, Fiz. Tekh. Poluprovodn. 4, 1826 (1970) [Sov. Phys. Semicond. 4, 1573 (1970)].Google Scholar
  29. 29.
    I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski, Appl. Phys. Lett. 17, 109 (1970).CrossRefGoogle Scholar
  30. 30.
    Zh. I. Alferov, V. M. Andreev, S. G. Konnikov, V. G. Nikitin, and D. N. Tret’yakov, in Proceedings of the International Conference on the Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures, Budapest, October, 1970, Vol. 1, edited by G. Szigeti (Académiai Kiadó, Budapest, 1971), p. 93.Google Scholar
  31. 31.
    G. A. Antipas, R. L. Moon, L. W. James, J. Edgecumbe, and R. L. Bell, Institute of Physics Conference Series, No. 17 (IOP Publ., Bristol, 1973), p. 48.Google Scholar
  32. 32.
    L. James, G. Antipas, R. Moon, J. Edgecumbe, and R. L. Bell, Appl. Phys. Lett. 22, 270 (1973).CrossRefGoogle Scholar
  33. 33.
    A. P. Bogatov, L. M. Dolginov, L. V. Druzhinina, P. G. Eliseev, LB. N. Sverdlova, and E. G. Shevchenko, Kvantovaya Élektron. 1, 2294 (1974) [Sov. J. Quantum Electron. 4, 1281 (1974)]; J. J. Hsieh, Appl. Phys. Lett. 28, 283 (1976).Google Scholar
  34. 34.
    Zh. I. Alferov, I. N. Arsent’ev, D. Z. Garbuzov, S. G. Konnikov, and V. D. Rumyantsev, Pis’ma Zh. Tekh. Fiz. 1, 305 (1975) [Sov. Tech. Phys. Lett. 1, 147 (1975)]; Pis’ma Zh. Tekh. Fiz. 1, 406 (1975) [Sov. Tech. Phys. Lett. 1, 191 (1975)]; W. R. Hitchens, N. Holonyak, Jr., P. D. Wright, and J. J. Coleman, Appl. Phys. Lett. 27, 245 (1975).Google Scholar
  35. 35.
    Zh. I. Alferov, V. M. Andreev, R. F. Kazarinov, E. L. Portnoi, and R. A. Suris, Inventor’s Certificate No. 392875 [in Russian], Application No. 1677436, priority as of July 19, 1971.Google Scholar
  36. 36.
    H. Kogelnik and C. V. Shank, Appl. Phys. Lett. 18, 152 (1971).Google Scholar
  37. 37.
    R. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. 6, 1359 (1972) [Sov. Phys. Semicond. 6, 1184 (1972)].Google Scholar
  38. 38.
    Zh. I. Alferov, S. A. Gurevich, R. F. Kazarinov, M. N. Mizerov, E. L. Portnoi, R. P. Seisyan, and R. A. Suris, Fiz. Tekh. Poluprovodn. 8, 832 (1974) [Sov. Phys. Semicond. 8, 541 (1974)]; Zh. I. Alferov, S. A. Gurevich, N. V. Klepikova, V. I. Kuchinskii, M. N. Mizerov, and E. L. Portnoi, Pis’ma Zh. Tekh. Fiz. 1, 645 (1975) [Sov. Tech. Phys. Lett. 1, 286 (1975)].Google Scholar
  39. 39.
    N. Nakamura, A. Yariv, H. W. Yen, S. Somekh, and H. L. Garvin, Appl. Phys. Lett. 22, 315 (1973).CrossRefGoogle Scholar
  40. 40.
    D. R. Scifres, R. D. Burnham, and W. Streifer, Appl. Phys. Lett. 25, 203 (1974).CrossRefGoogle Scholar
  41. 41.
    H. Kroemer and G. Griffiths, IEEE Trans. Electron Devices EDL-4, 20 (1983).Google Scholar
  42. 42.
    A. N. Baranov, B. E. Dzhurtanov, A. N. Imenkov, A. A. Rogachev, Yu. M. Shernyakov, and Yu. P. Yakovlev, Fiz. Tekh. Poluprovodn. 20, 2217 (1986) [Sov. Phys. Semicond. 20, 1385 (1986)].Google Scholar
  43. 43.
    A. Y. Cho, J. Vac. Sci. Technol. 8, 31 (1971); A. Y. Cho, Appl. Phys. Lett. 19, 467 (1971).CrossRefGoogle Scholar
  44. 44.
    H. M. Manasevit, Appl. Phys. Lett. 12, 156 (1968).CrossRefGoogle Scholar
  45. 45.
    R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 31, 466 (1977).ADSGoogle Scholar
  46. 46.
    R. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 827 (1974).CrossRefADSGoogle Scholar
  47. 47.
    L. Esaki and R. Tsu, IBM J. Res. Dev. 14, 61 (1970).Google Scholar
  48. 48.
    L. V. Keldysh, Fiz. Tverd. Tela (Leningrad) 4, 2265 (1962) [Sov. Phys. Solid State 4, 1658 (1962)].Google Scholar
  49. 49.
    R. F. Kazarinov and R. A. Suris, Fiz. Tekh. Poluprovodn. 5, 707 (1971) [Sov. Phys. Semicond. 5, 619 (1971)]; Fiz. Tekh. Poluprovodn. 6, 120 (1972) [Sov. Phys. Semicond. 6, 96 (1972)]; Fiz. Tekh. Poluprovodn. 7, 346 (1973) [Sov. Phys. Semicond. 7, 246 (1973)].Google Scholar
  50. 50.
    R. Tsu and L. Esaki, Appl. Phys. Lett. 22, 562 (1973).CrossRefGoogle Scholar
  51. 51.
    G. Osbourn, J. Appl. Phys. 53, 1586 (1982).CrossRefADSGoogle Scholar
  52. 52.
    M. Ludowise, W. T. Dietze, C. R. Lewis, M. D. Camras, N. Holonyak, B. K. Fuller, and M. A. Nixon, Appl. Phys. Lett. 42, 487 (1983).ADSGoogle Scholar
  53. 53.
    L. L. Chang, L. Easki, W. E. Howard, and R. Ludke, J. Vac. Sci. Technol. 10, 11 (1973).Google Scholar
  54. 54.
    L. L. Chang, L. Easki, and R. Tsu, Appl. Phys. Lett. 24, 593 (1974).Google Scholar
  55. 55.
    L. Esaki and L. L. Chang, Phys. Rev. Lett. 33, 686 (1974).CrossRefGoogle Scholar
  56. 56.
    J. R. Schrieffer, in Semiconductor Surface Physics, edited by R. H. Kingston (Univ. Penn. Press, Philadelphia, 1956), p. 68.Google Scholar
  57. 57.
    A. B. Fowler, F. F. Fang, W. E. Howard, and P. J. Stilee, Phys. Rev. Lett. 16, 901 (1966).CrossRefADSGoogle Scholar
  58. 58.
    V. N. Lutskii, Phys. Status Solidi A 1, 199 (1970).Google Scholar
  59. 59.
    R. Dingle, H. L. Stormer, H. L. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978).CrossRefADSGoogle Scholar
  60. 60.
    D. Delagebeaudeuf et al., Electron. Lett. 16, 667 (1980).ADSGoogle Scholar
  61. 61.
    T. Mimura, S. Hiyamizu, T. Fuji, and K. A. Nanbu, Jpn. J. Appl. Phys. 19, L225 (1980).Google Scholar
  62. 62.
    J. P. van der Ziel, R. Dingle, R. C. Miller, W. Wiegmann, and W. A. Nordland, Jr., Appl. Phys. Lett. 26, 463 (1975).ADSGoogle Scholar
  63. 63.
    R. D. Dupuis, P. D. Dapkus, N. Holonyak, Jr., E. A. Rezek, and R. Chin, Appl. Phys. Lett. 32, 295 (1978).ADSGoogle Scholar
  64. 64.
    W. T. Tsang, Appl. Phys. Lett. 40, 217 (1982).ADSGoogle Scholar
  65. 65.
    E. Rezek, H. Shichijo, B. A. Vojak, and N. Holonyak, Jr., Appl. Phys. Lett. 31, 534 (1977).ADSGoogle Scholar
  66. 66.
    Zh. I. Alferov, D. Z. Garbuzov, I. N. Arsent’ev, B. Ya. Ber, L. S. Vavilova, V. V. Krasovskii, and A. V. Chudinov, Fiz. Tekh. Poluprovodn. 19, 1108 (1985) [Sov. Phys. Semicond. 19, 679 (1985)].Google Scholar
  67. 67.
    Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebitskii, V. D. Rumyantsev, and V. P. Khvostikov, Pis’ma Zh. Tekh. Fiz. 12, 1089 (1986) [Sov. Tech. Phys. Lett. 12, 450 (1986)].Google Scholar
  68. 68.
    Zh. I. Alferov, D. Z. Garbuzov, K. Yu. Kizhaev, A. B. Nivin, S. A. Nikishin, A. V. Ovchinnikov, Z. P. Sokolova, I. S. Tarasov, and A. V. Chudinov, Pis’ma Zh. Tekh. Fiz. 12, 210 (1986) [Sov. Tech. Phys. Lett. 12, 87 (1986)]; Zh. I. Alferov, D. Z. Garbuzov, S. V. Zaitsev, A. B. Nivin, A. V. Ovchinnikov, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 21, 824 (1987) [Sov. Phys. Semicond. 21, 503 (1987)].Google Scholar
  69. 69.
    Zh. I. Alferov, N. Yu. Antonishkis, I. N. Arsent’ev, D. Z. Garbuzov, V. I. Kolyshkin, T. N. Nalet, N. A. Strugov, and A. S. Tikunov, Fiz. Tekh. Poluprovodn. 22, 1031 (1988) [Sov. Phys. Semicond. 22, 650 (1988)]; D. Z. Garbuzov et al., in Technical Digest CLEO, Paper THU44 (1988), p. 396.Google Scholar
  70. 70.
    D. Z. Garbuzov et al., in Conference Digest of the 12th International Semiconductor Laser Conference (Davos, Switzerland, 1990), p. 238.Google Scholar
  71. 71.
    Zh. I. Alferov, A. I. Vasil’ev, S. V. Ivanov, P. S. Kop’ev, N. N. Ledentsov, M. É. Lutsenko, B. Ya. Mel’tser, and V. M. Ustinov, Pis’ma Zh. Tekh. Fiz. 14, 1803 (1988) [Sov. Tech. Phys. Lett. 14, 782 (1988)].Google Scholar
  72. 72.
    J. Faist et al., Science 264, 553 (1994); Electron. Lett. 30, 865 (1994).ADSGoogle Scholar
  73. 73.
    K. V. Klitzing, G. Dorda, and M. Pepper, Phys. Rev. Lett. 45, 494 (1980).CrossRefADSGoogle Scholar
  74. 74.
    D. C. Tsui, H. L. Stormer, and A. C. Gossard, Phys. Rev. Lett. 48, 1559 (1982).ADSGoogle Scholar
  75. 75.
    P. M. Petroff, A. C. Gossard, R. A. Logan, and W. Wiegmann, Appl. Phys. Lett. 41, 635 (1982).CrossRefADSGoogle Scholar
  76. 76.
    Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).CrossRefADSGoogle Scholar
  77. 77.
    S. Simhony, E. Kapon, T. Colas, D. M. Hwang, N. G. Stoffel, and P. Worland, Appl. Phys. Lett. 59, 2225 (1991).CrossRefADSGoogle Scholar
  78. 78.
    A. I. Ekimov and A. A. Anushchenko, JETP Lett. 34, 347 (1981).ADSGoogle Scholar
  79. 79.
    Al. L. Éfros and A. L. Éfros, Fiz. Tekh. Poluprovodn. 16, 1209 (1982) [Sov. Phys. Semicond. 16, 772 (1982)].Google Scholar
  80. 80.
    L. Goldstein, F. Glas, J. Y. Marzin, M. N. Charasse, G. Le Roux, Appl. Phys. Lett. 47, 1099 (1985).ADSGoogle Scholar
  81. 81.
    A. F. Andreev, Zh. Éksp. Teor. Fiz. 80, 2042 (1981) [Sov. Phys. JETP 53, 1063 (1981)].Google Scholar
  82. 82.
    V. I. Marchenko, Zh. Éksp. Teor. Fiz. 81, 1141 (1981) [Sov. Phys. JETP 54, 605 (1981)].Google Scholar
  83. 83.
    R. Nötzel, N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, Phys. Rev. Lett. 67, 3812 (1991).CrossRefADSGoogle Scholar
  84. 84.
    V. A. Shchukin, A. I. Borovkov, N. N. Ledentsov, and P. S. Kop’ev, Phys. Rev. B 51, 17767 (1995).Google Scholar
  85. 85.
    P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, P. S. Kop’ev, and V. M. Ustinov, Appl. Phys. Lett. 64, 1526 (1994).ADSGoogle Scholar
  86. 86.
    V. Bressler Hill, A. Lorke, S. Varma, P. M. Petroff, K. Pond, and W. H. Weinberg, Phys. Rev. B 50, 8479 (1994).ADSGoogle Scholar
  87. 87.
    N. N. Ledenstov et al., in Proceedings of the 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 1994, World Scientific, Singapore, 1995.Google Scholar
  88. 88.
    Zh. I. Alferov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop’ev, I. V. Kochnev, V. V. Khomin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsul’nikov, Yu. M. Shernyakov, and D. Bimberg, Fiz. Tekh. Poluprovodn. 30, 357 (1996) [Semiconductors 30, 197 (1996)].Google Scholar
  89. 89.
    V. A. Shchukin, N. N. Ledentsov, P. S. Kop’ev, and D. Bimberg, Phys. Rev. Lett. 75, 2968 (1995); V. A. Shchukin, N. N. Ledentsov, M. Grundmann, P. S. Kop’ev, and D. Bimberg, Surf. Sci. 352–354, 117 (1996).CrossRefADSGoogle Scholar
  90. 90.
    Zh. I. Alferov, N. A. Bert, A. Yu. Egorov, A. E. Zhukov, P. S. Kop’ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul’nikov, Yu. M. Shernyakov, and D. Bimberg, Fiz. Tekh. Poluprovodn. 30, 351 (1996) [Semiconductors 30, 194 (1996)].Google Scholar
  91. 91.
    M. Grundmann et al., Phys. Rev. Lett. 74, 4043 (1995).CrossRefADSGoogle Scholar
  92. 92.
    N. Kirstaedter et al., Electron. Lett. 30, 1416 (1994).CrossRefGoogle Scholar
  93. 93.
    M. V. Maksimov et al., Fiz. Tekh. Poluprovodn. 31, 670 (1997) [Semiconductors 31, 571 (1997)].Google Scholar
  94. 94.
    M. Grundmann et al., in Proceedings of the Eighth International Conference on Indium Phosphide and Related Materials (Schwäbisch Gmünd, Germany, 1996).Google Scholar
  95. 95.
    V. M. Ustinov et al., in Ninth International Conference on MBE (Malibu, USA, August, 1996) (Proceedings to be published in J. Crystal Growth).Google Scholar
  96. 96.
    F. Hatami, N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, and D. Bimberg et al., Appl. Phys. Lett. 67, 656 (1995).CrossRefADSGoogle Scholar

Copyright information

© American Institute of Physics 1998

Authors and Affiliations

  • Zh. I. Alferov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteRussian Academy of SciencesSt. PetersburgRussia

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