Abstract
The results of a theoretical and experimental investigation of resonant Mandelstam-Brillouin light scattering by thermal acoustic phonons with k=0 near the direct absorption edge (in the case of ZnSe crystals) are analyzed. The appearance of a new type of resonant increase in the intensity of Raman scattering by optical phonons with k≠0, which corresponds to resonance with the scattered light in the output channel, near the indirect absorption edge (in the case of semi-insulating GaP:N crystals) is also reported. The resonant gain reaches ∼4×103 at frequencies corresponding to overtone scattering assisted by LO(X) and LO(L) phonons. Exciton states belonging to both discrete exciton bands and to the continuous spectrum are considered as the intermediate states involved in the scattering processes in calculations of the resonant scattering tensors. In addition, all the intraband transitions, as well as the interband transitions between the conduction band, the valence bands, and the spin-orbit split-off band are taken into account, and good agreement with the experimental results is obtained.
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Fiz. Tverd. Tela (St. Petersburg) 40, 938–940 (May 1998)
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Bairamov, B.K., Gol’tsev, A.V., Toporov, V.V. et al. Resonant Mandelstam-Brillouin light scattering and Raman scattering in semiconductors with intermediate exciton states belonging to discrete exciton bands and the continuous spectrum. Phys. Solid State 40, 864–866 (1998). https://doi.org/10.1134/1.1130427
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DOI: https://doi.org/10.1134/1.1130427