A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.
References
Bulao, J. How much data is created every day in 2022? TechJury https://go.nature.com/3tvWilV (2022).
Pastor, M. Data storage is the key to autonomous vehicles’ future. IoT Now https://go.nature.com/3Ob8SQV (2020).
Johnson, C. How much data is produced every day 2021? TheNextTech https://go.nature.com/3E5oZuS (2021).
Study: 95% of all data captured goes unused in the construction and engineering industry. For Construction Pros https://go.nature.com/3X2GMvs (2018).
Lee, T. Y. et al. In Proc. 2022 IEEE Int. Electron Devices Meeting (in the press); https://ieee-iedm.org/program/
Nguyen, M.-H., Zhao, M., Ralph, D. C. & Buhrman, R. A. Appl. Phys. Lett. 108, 242407 (2016).
Weisheit, M. et al. Science 315, 349–351 (2007).
Dieny, B. et al. Nat. Electron. 3, 446–459 (2020).
Cheong, W. et al. In 2018 IEEE International Solid-State Circuits Conference 338–340 (IEEE, 2018); https://doi.org/10.1109/ISSCC.2018.8310322
Handy, J. New Memories for Efficient Computing White Paper (Objective Analysis, 2018); https://go.nature.com/3E3wjHe
FRAM Overview and Usage WhitePaper (Fujitsu Semiconductor Memory Solution Limited, 2021); https://go.nature.com/3Ai7qXc
Chang S.-C. et al. In Proc. 2021 IEEE International Electron Devices Meeting 33.2.1–33.2.4 (IEEE, 2021); https://doi.org/10.1109/IEDM19574.2021.9720510
Sun, Y. et al. IEEE Trans. Circuits Syst. II 66, 753–757 (2019).
Mohan, V. et al. IEEE Trans. Comput. Aided Des. Integr. Circuit. Syst. 7, 1031–1044 (2013).
Park, H., Yoo, S. & Lee, S. In Proc. 48th Design Automation Conference 59–64 (ACM, 2011); https://doi.org/10.1145/2024724.2024738
Choi, S., Son, J., Cho, K. & Kim, S. Sci. Rep. 11, 17983 (2021).
Kim, S. S. et al. Adv. Mater. https://doi.org/10.1002/adma.202200659 (2022).
Tong, X. et al. J. Semicond. 35, 014006 (2014).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Competing interests
The author declares no competing interests.
Rights and permissions
About this article
Cite this article
Hirohata, A. MRAM makes its mark. Nat Electron 5, 832–833 (2022). https://doi.org/10.1038/s41928-022-00893-w
Published:
Issue Date:
DOI: https://doi.org/10.1038/s41928-022-00893-w
- Springer Nature Limited