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Room-temperature ferroelectric switching

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Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

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Fig. 1: Spin-texture switching of ferroelectric Rashba semiconductors.

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Authors and Affiliations

  1. Department of Physics, Washington University in St. Louis, St. Louis, MO, USA

    Ruixiang Fei & Li Yang

  2. Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA

    Li Yang

Authors
  1. Ruixiang Fei
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  2. Li Yang
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Correspondence to Li Yang.

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The authors declare no competing interests.

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Fei, R., Yang, L. Room-temperature ferroelectric switching. Nat Electron 4, 703–704 (2021). https://doi.org/10.1038/s41928-021-00660-3

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