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Ferroelectric tunnel junctions with high tunnelling electroresistance

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A van der Waals ferroelectric tunnel junction with asymmetric metal and graphene contacts exhibits a high resistance ratio between on and off states, and could be of value in the development of low-power computing.

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Fig. 1: Ferroelectric tunnelling junctions and their tunnelling electroresistances.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China

    Xinran Wang

  2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shangai, China

    Jianlu Wang

Authors
  1. Xinran Wang
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  2. Jianlu Wang
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Correspondence to Xinran Wang or Jianlu Wang.

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Wang, X., Wang, J. Ferroelectric tunnel junctions with high tunnelling electroresistance. Nat Electron 3, 440–441 (2020). https://doi.org/10.1038/s41928-020-0463-3

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