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2D Ferroelectricity in hetero-phase junction

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Manipulation of vacancy and strain enables fabrication of large area, phase-controllable 2D ferroelectric materials and their hetero-phase junction.

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Fig. 1: Phase transition control in 2D ferroelectric In2Se3.

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Authors and Affiliations

  1. Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, China

    Bilu Liu

  2. Institute of Technology for Carbon Neutrality/Faculty of Materials Science and Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, China

    Hui-Ming Cheng

  3. Institute of Metal Research, Chinese Academy of Sciences, Shenyan, China

    Hui-Ming Cheng

Authors
  1. Bilu Liu
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  2. Hui-Ming Cheng
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Corresponding authors

Correspondence to Bilu Liu or Hui-Ming Cheng.

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Liu, B., Cheng, HM. 2D Ferroelectricity in hetero-phase junction. Nat. Nanotechnol. 18, 5–6 (2023). https://doi.org/10.1038/s41565-022-01263-5

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