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Identifying single spin defects in gallium nitride

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Single spin defects are identified in gallium nitride at room temperature, exhibiting a spin readout contrast of up to 30%.

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Fig. 1: Optical cycles and ODMR signals.

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Authors and Affiliations

  1. CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China

    Jin-Shi Xu & Chuan-Feng Li

  2. CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China

    Jin-Shi Xu & Chuan-Feng Li

  3. Hefei National Laboratory, University of Science and Technology of China, Hefei, China

    Jin-Shi Xu & Chuan-Feng Li

Authors
  1. Jin-Shi Xu
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  2. Chuan-Feng Li
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Corresponding authors

Correspondence to Jin-Shi Xu or Chuan-Feng Li.

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The authors declare no competing interests.

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Xu, JS., Li, CF. Identifying single spin defects in gallium nitride. Nat. Mater. 23, 447–448 (2024). https://doi.org/10.1038/s41563-024-01841-z

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