Engineering channels for ion transport in a SiGe solid-state electrolyte layer allows one to significantly decrease the spatial and temporal variations of the electrical characteristics in resistive switching memories.
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Strukov, D.B. Tightening grip. Nature Mater 17, 293–295 (2018). https://doi.org/10.1038/s41563-018-0020-x
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DOI: https://doi.org/10.1038/s41563-018-0020-x
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