Skip to main content
Springer Nature Link
Account
Fig. 1: Fabrication of InP-on-Si (100) substrate and material characterization before and after epitaxy. | Light: Science & Applications

Fig. 1: Fabrication of InP-on-Si (100) substrate and material characterization before and after epitaxy.

From: High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Fig. 1: Fabrication of InP-on-Si (100) substrate and material characterization before and after epitaxy.The alternative text for this image may have been generated using AI.

a The schematic diagram of the fabrication process of InPOS by ion-cutting technique. b Image of 4-inch as-transferred InP thin film on a Si-based substrate by ion-cutting. c Thickness mapping of the polished InP thin film. The AFM images of (d) bulk InP, (e) InPOS, (f) bulk InP after MOCVD growth and (g) InPOS after MOCVD growth. h The normalized (004) X-ray rocking curves of the bulk InP and InPOS before and after MOCVD epitaxial growth (i) RT-PL spectra of the AlGaInAs MQWs structure grown on the bulk InP and InPOS

Back to article page