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Spin transistors

Closer to an all-electric device

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A Correction to this article was published on 09 April 2015

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The use of asymmetrically biased quantum point contacts in semiconductor heterostructures paves the way for the realization of an all-electric spin field-effect transistor.

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Figure 1: Principle of operation of the all-electric spin valve.

Change history

  • 27 February 2015

    In the version of this News & Views article previously published, the semiconductor heterostructure 'AlGaAs/GaAs' should have been 'InGaAs/InAlAs'. Corrected in the online versions after print.

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Authors and Affiliations

  1. Marc Cahay is in the Department of Electrical Engineering and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221, USA,

    Marc Cahay

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  1. Marc Cahay
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Correspondence to Marc Cahay.

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Cahay, M. Closer to an all-electric device. Nature Nanotech 10, 21–22 (2015). https://doi.org/10.1038/nnano.2014.305

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