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Negative capacitance to the rescue?

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Can ferroelectric materials help transistors overcome the 'Boltzmann tyranny' that limits the performances of conventional semiconductor devices?

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Figure 1: Schematic diagram of a field-effect transistor (FET).

References

  1. Kish, L. B. Phys. Lett. A 305, 144–149 (2002).

    Article  CAS  Google Scholar 

  2. Salahuddin, S. & Datta, S. Nano Lett. doi: 10.1021/nl071804g (2007).

  3. Meindl, J. D., Chen, Q. & Davis J. A. Science 293, 2044–2049 (2001).

    Article  CAS  Google Scholar 

  4. Salahuddin, S. & Datta, S. Appl. Phys. Lett. 90, 093503 (2007).

    Article  Google Scholar 

  5. Nikonov, D. E., Bourianoff, G. I. & Gargini P. A. J. Superconduc. Novel Magn. 19, 497–513 (2006).

    Article  CAS  Google Scholar 

  6. Jonscher, A. K. J. Chem. Soc. Faraday Trans. 2, 75–81 (1986).

    Article  Google Scholar 

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Zhirnov, V., Cavin, R. Negative capacitance to the rescue?. Nature Nanotech 3, 77–78 (2008). https://doi.org/10.1038/nnano.2008.18

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