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2D crystal semiconductors

Intimate contacts

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High electrical contact resistance had stalled the promised performance of two-dimensional layered devices. Low-resistance metal–semiconductor contacts are now obtained by interfacing semiconducting MoS2 layers with the metallic phase of this material.

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Figure 1: Contact resistances for various semiconductor materials against the quantum limits for crystalline materials.

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Authors and Affiliations

  1. Depdeep Jena and Grace Huili Xing are in the Department of Electrical Engineering, and in the Department of Electrical and Computer Engineering, and Department of Materials Science & Engineering, University of Notre Dame, Indiana 46556, USA, Cornell University, New York 14853, USA,

    Grace Huili Xing

  2. Kaustav Banerjee is in the Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA,

    Kaustav Banerjee

  3. Debdeep Jena

Authors
  1. Debdeep Jena
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  2. Kaustav Banerjee
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  3. Grace Huili Xing
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Correspondence to Debdeep Jena.

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Jena, D., Banerjee, K. & Xing, G. Intimate contacts. Nature Mater 13, 1076–1078 (2014). https://doi.org/10.1038/nmat4121

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