High annealing temperatures have limited the technological potential of solution-processed metal oxide semiconductors. It is now shown that high-quality films can be formed below 250 °C using precursors that are hydrolysed on-chip.
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Keszler, D. Transistors pick up steam. Nature Mater 10, 9–10 (2011). https://doi.org/10.1038/nmat2932
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DOI: https://doi.org/10.1038/nmat2932
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