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Spintronics

A growing science

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The integration of spintronic elements with present-day electronic devices requires that a material with high spin polarization is matched with widely used semiconductors. The stabilization of europium oxide on silicon and gallium nitride is a clear leap forward in this direction.

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Figure 1: Artistic representation of the structure of EuO.
Figure 2: A typical spintronic device.

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Authors and Affiliations

  1. Department of Physics, John F. Gregg is at the Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK. j.gregg1@physics.ox.ac.uk,

    John F. Gregg

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  1. John F. Gregg
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Gregg, J. A growing science. Nature Mater 6, 798–799 (2007). https://doi.org/10.1038/nmat2049

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