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Multiferroic memories

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Multiferroics might hold the future for the ultimate memory device. The demonstration of a four-state resistive memory element in a tunnel junction with multiferroic barriers represents a major step in this direction.

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Figure 1
Figure 2: The four degrees of multiferroic order.

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Authors and Affiliations

  1. J. F. Scott is in the Earth Sciences Department of Cambridge University, Cambridge CB2 3EQ, UK. jsco99@esc.cam.ac.uk,

    J. F. Scott

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  1. J. F. Scott
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Scott, J. Multiferroic memories. Nature Mater 6, 256–257 (2007). https://doi.org/10.1038/nmat1868

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