The drive to improve digital memory through ever-shrinking electronic circuitry will ultimately face a bottleneck. Researchers propose exploiting the room 'inside' memory elements as a solution.
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Garcia, V., Bibes, M. Inside story of ferroelectric memories. Nature 483, 279–280 (2012). https://doi.org/10.1038/483279a
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DOI: https://doi.org/10.1038/483279a
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