Hydrogen ions, both positive and negative, have a pervasive influence on the properties of materials and solutions. A unified picture of the behaviour of these ions has now been drawn.
References
Van de Walle, C. G. & Neugebauer, J. Nature 423, 626–628 (2003).
Marx, D., Tuckerman, M. E., Hutter, J. & Parrinello, M. Nature 397, 601–604 (1999).
Tuckerman, M. E., Marx, D. & Parrinello, M. Nature 417, 925–929 (2002).
Pankove, J. I. & Johnson, N. M. (eds) Semiconductors and Semimetals Vol. 34, Hydrogen in Semiconductors (Academic, Boston, 1991).
Van de Walle, C. G. & Martin, R. M. Phys. Rev. B 34, 5621–5634 (1986).
Franciosi, A. & Van de Walle, C. G. Surf. Sci. Rep. 25, 1–140 (1996).
Caldas, M. J., Fazzio, A. & Zunger, A. Appl. Phys. Lett. 45, 671–673 (1984).
Tersoff, J. & Harrison, W. A. Phys. Rev. Lett. 58, 2367–2370 (1987).
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Martin, R., Galli, G. Hydrogen falls into line. Nature 423, 595–596 (2003). https://doi.org/10.1038/423595a
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DOI: https://doi.org/10.1038/423595a
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