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Single electrons in silicon drops

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A Correction to this article was published on 01 July 1998

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Figure 1: A new single-electron transistor (SET).

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References

  1. Millikan, R. A. Phys. Rev. 32, 349(1911).

    Google Scholar 

  2. Fulton, T. A. & Dolan, G. J. Phys. Rev. Lett. 59, 109–112 (1987).

    Google Scholar 

  3. Grabert, H. & Devoret, M. H. (eds) Single Charge Tunneling (Plenum, New York, 1992).

  4. Zhuang, L., Guo, L. & Chou, S. Y. Appl. Phys. Lett. 72, 1205–1207 (1998).

    Google Scholar 

  5. Fowler, A. Phys. Today October, 50–54 (1997).

  6. Keller, M. W., Martinis, J. M., Zimmerman, N. M. & Steinbach, A. H. Appl. Phys. Lett. 69, 1804–1806 (1990).

    Google Scholar 

  7. Guo, L., Leobandung, E. & Chou, S. Y. Science 275, 649–652 (1997).

    Google Scholar 

  8. Tiwari, S. et al. Appl. Phys. Lett. 68, 1377–1379 (1996).

    Google Scholar 

  9. Shirakashi, J. & Matsumoto, K. Appl. Phys. Lett. 72, 1893–1895 (1998).

    Google Scholar 

  10. Tans, S. J., Verscheueren, A. R. M. & Decker, C. Nature 393, 49–52 (1998).

    ADS  CAS  Google Scholar 

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Glattli, D. Single electrons in silicon drops. Nature 393, 516–517 (1998). https://doi.org/10.1038/31099

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