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Interaction of Defect and Domain Structures of Triglycine Sulphate Crystals in Ferroelectric and Paraelectric States

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An Erratum to this article was published on 29 June 1968

Abstract

THE interaction of domain and defect structures in ferroelectrics and, in particular, in triglycine sulphate (TGS) accounts for many important properties of this class of crystal. An example is the restoring of the domain structure after repolarization processes (the “memory” of crystals) associated with the real structure of crystals. The domain structure of TGS, which has been studied by etching1,2, electroluminescence3 and the charged powder technique4, has been related to only one kind of structure defect, however—dislocations5,6—and it has been stated that there is no correlation between domains and dislocations.

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Authors and Affiliations

  1. Institute of Crystallography, Academy of Sciences of the USSR, Moscow

    G. I. DISTLER, V. P. KONSTANTINOVA, Y. M. GERASIMOV & G. A. TOLMACHEVA

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  1. G. I. DISTLER
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  2. V. P. KONSTANTINOVA
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  3. Y. M. GERASIMOV
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  4. G. A. TOLMACHEVA
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DISTLER, G., KONSTANTINOVA, V., GERASIMOV, Y. et al. Interaction of Defect and Domain Structures of Triglycine Sulphate Crystals in Ferroelectric and Paraelectric States. Nature 218, 762–765 (1968). https://doi.org/10.1038/218762a0

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