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Radioactivation Analysis of Arsenic in Silicon

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Abstract

SMALL traces of impurities in the range 0.001–1 p.p.m. of group V elements present in semiconductors such as germanium and silicon have a large effect on the electrical properties. Chemical methods of analysis in this range are very dependent on the purity of the chemical reagents used, and also require large sample weights. On the other hand, the method of radioactivation analysis labels the impurity atoms originally present (provided they produce radioactive isotopes), and these atoms may then be separated with added carrier and ordinary laboratory grade chemical reagents.

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References

  1. Smales, A. A., and Pate, B. D., Anal. Chem., 24, 717 (1952).

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Authors and Affiliations

  1. Research Laboratory, British Thomson-Houston Co., Ltd., Rugby

    J. A. JAMES & D. H. RICHARDS

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  1. J. A. JAMES
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  2. D. H. RICHARDS
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JAMES, J., RICHARDS, D. Radioactivation Analysis of Arsenic in Silicon. Nature 175, 769–770 (1955). https://doi.org/10.1038/175769a0

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