Skip to main content
Log in

On the Nature of Radiation Resistance in Compensated Silicon

  • Published:
Russian Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

REFERENCES

  1. V. B. Ufimtsev and V. I. Fistul', Electron. Tech., Mater., No. 9, 41–49 (1984).

  2. V. K. Bazhenov and V. I. Fistul', Fiz. Tekh. Poluprovodn, 19, No. 8, 1345–1362 (1985).

    Google Scholar 

  3. Deep centers in semiconductors, Plenum Press, N.Y., 1986.

  4. Ch. Kittel, Introduction into Solid State Physics [in Russian], Nauka, Moscow, 1978.

    Google Scholar 

  5. A. M. Kosevich, Physical Mechanics of Real Crystals, Naukova Dumka [in Ukrainian], Kiev, 1981.

  6. R. Chandrasekar, Stochastic Problems in Physics and Astronomy [in Russian], Fizmatgiz, Moscow, 1947.

    Google Scholar 

  7. I. G. Atabaev, M. S. Saidov, L. I. Khirunenko, et al., Fiz. Tekh. Poluprovodn, 21, No. 3, 570–573 (1987).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Oksengendler, B.L., Karimov, M., Yunusov, M.C. et al. On the Nature of Radiation Resistance in Compensated Silicon. Russian Physics Journal 47, 790–791 (2004). https://doi.org/10.1023/B:RUPJ.0000049756.21347.33

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:RUPJ.0000049756.21347.33

Keywords

Navigation