Skip to main content
SpringerLink
Log in

Specific Features of Determining the Electrophysical Parameters of Variband CMT Structures Grown by Molecular-Beam Epitaxy

  • Published:
Russian Physics Journal Aims and scope

Abstract

The effects of wide- and narrow- variband layers on the charge-carrier concentration and mobility in the MBE-grown epitaxial CMT structures measured by the Hall-effect method are studied by numerical simulation. The dependence of the relative difference between the experimentally obtained effective values of electrophysical parameters and those of an epitaxial coating on the variband-layer characteristics is discussed. An analysis of this dependence shows that the manner in which the broad-band and narrow-band layers affect the resulting parameters is inequivalent. The calculations suggest that the effect of the wide-band layer on the experimental electrophysical parameters can be neglected. In the case of the narrow variband layer, however, the difference between the electophysical parameters strongly depends on the variband-layer parameters and the concentrations of ionized donor and acceptor centers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. A. V. Voitsekhovskii, Yu. A. Denisov, A. P. Kokhanenko, et al, Avtometriya, No. 4, 47 (1998).

  2. V. S. Varavin, A. F. Kravchenko, and Yu. G. Sidorov, Fiz. Tekhn. Prib., 35, No. 9, 1036 (2001).

    Google Scholar 

  3. L. A. Bovina and V. I. Stafeev, The Physics of A 2 B 6 Compounds [in Russian], Nauka, Moscow, 1986.

    Google Scholar 

  4. E. V. Kuchis, Galvanomagnetic Effects and Investigation Techniques [in Russian], Radio i Svyaz', Moscow, 1990.

    Google Scholar 

  5. V. L. Bonch-Bruevich and S. G. Kalashnikov, The Physics of Semiconductors [in Russian], Nauka, Moscow, 1977.

    Google Scholar 

  6. Yu. Nemirovsky and E. Finkman, J. Appl. Phys., 50, 8107 (1979).

    Google Scholar 

  7. Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, and N. N. Mikhailov, IR Matrix Photodetectors [in Russian], Nauka, Novosibirsk, 2001.

    Google Scholar 

  8. A. Rogalskii, IR Detectors [Russian translation], Nauka, Novosibirsk, 2003.

    Google Scholar 

  9. M. Wienecke, M. Schenk, and H. Berger, Semicond. Sci. Technol., 8, 299 (1993).

    Google Scholar 

  10. P. N. J. Dennis, C. T. Elliot, and C. L. Jones, Infrared Phys., 22, 167 (1982).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Tomsk State University, U.S.A

    A. V. Voitsekhovskii, D. V. Grigor'ev, A. G. Korotaev & A. P. Kokhanenko

Authors
  1. A. V. Voitsekhovskii
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. D. V. Grigor'ev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. G. Korotaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. P. Kokhanenko
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Voitsekhovskii, A.V., Grigor'ev, D.V., Korotaev, A.G. et al. Specific Features of Determining the Electrophysical Parameters of Variband CMT Structures Grown by Molecular-Beam Epitaxy. Russian Physics Journal 47, 764–772 (2004). https://doi.org/10.1023/B:RUPJ.0000049752.62418.6b

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:RUPJ.0000049752.62418.6b

Keywords

Search

Navigation