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Investigation of the Near-Surface Silicon Layers in SiO2–Si Structures

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Russian Physics Journal Aims and scope

Abstract

The regularities of formation of the near-surface silicon layers in the SiO2–Si structures are established using currently available investigation methods. The structural and impurity compositions of the layers are determined. The results can be used for studying the dynamics of postirradiation boosting charge storage in the silicon–silicon oxide structures and photoluminescent properties of silicon with a developed surface.

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Authors and Affiliations

  1. I. I. Mechnikov Odessa State University, Russia

    O. A. Kulinich, M. A. Glauberman & N. N. Sadova

Authors
  1. O. A. Kulinich
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  2. M. A. Glauberman
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  3. N. N. Sadova
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Kulinich, O.A., Glauberman, M.A. & Sadova, N.N. Investigation of the Near-Surface Silicon Layers in SiO2–Si Structures. Russian Physics Journal 46, 1029–1033 (2003). https://doi.org/10.1023/B:RUPJ.0000020815.74730.3c

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  • DOI: https://doi.org/10.1023/B:RUPJ.0000020815.74730.3c

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