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Modeling of the Interaction of High-Power Pulsed Ion Beams with Cadmium-Mercury-Tellurium Semiconductor Targets

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Abstract

A mathematical model for describing the interaction between high-power pulsed ion beams and semiconductor CdxHg1–x Te (cadmium–mercury–tellurium or CMT) targets is developed, the results of numerical simulation are reported, and the comparison with experiment is performed.

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Authors and Affiliations

  1. Tomsk State University, Russia

    A. V. Voitsekhovskii, A. P. Kokhanenko & S. A. Shul'ga

  2. Loughborough University, UK

    R. Smith

Authors
  1. A. V. Voitsekhovskii
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  2. A. P. Kokhanenko
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  3. S. A. Shul'ga
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  4. R. Smith
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Voitsekhovskii, A.V., Kokhanenko, A.P., Shul'ga, S.A. et al. Modeling of the Interaction of High-Power Pulsed Ion Beams with Cadmium-Mercury-Tellurium Semiconductor Targets. Russian Physics Journal 46, 791–799 (2003). https://doi.org/10.1023/B:RUPJ.0000010976.38145.38

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  • DOI: https://doi.org/10.1023/B:RUPJ.0000010976.38145.38

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