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The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification)

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Abstract

The original results are presented, and the current status of the Fermi level pinning in semiconductors is reviewed for different physical phenomena (interphase boundaries, semiconductor clusters, and radiation modification of semiconductors).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physical-Technical Institute, Russia

    V. N. Brudnyi & S. N. Grinyaev

  2. Obninsk Branch of the L. Ya. Karpov Institute of Physical Chemistry, Russia

    N. G. Kolin

Authors
  1. V. N. Brudnyi
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  2. S. N. Grinyaev
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  3. N. G. Kolin
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Brudnyi, V.N., Grinyaev, S.N. & Kolin, N.G. The Fermi Level Pinning in Semiconductors (Interphase Boundaries, Clusters, and Radiation Modification). Russian Physics Journal 46, 594–600 (2003). https://doi.org/10.1023/B:RUPJ.0000008185.60287.2e

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  • DOI: https://doi.org/10.1023/B:RUPJ.0000008185.60287.2e

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