Skip to main content
SpringerLink
Log in

Physics and Technology of III–V Heterostructures: Current Status and Trends in the Development

  • Published:
Russian Physics Journal Aims and scope

Abstract

Rapid progress in semiconductor electronics and transition from micro- to nanoelectronics result from progressively smaller dimensions of complementary metal-oxide-semiconductor (CMOS) transistors, development of new single-electron devices, and optical and quantum logical elements. The development of nanotechnologies is an integral part of this process. The present paper reviews the current status of research in molecular-beam epitaxy performed at the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences (Novosibirsk).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. J. R. Arthur and J. J. LePore, J. Vac. Sci. Technol., 6, 545 (1969); A. Y. Cho, J. Vac. Sci. Technol., 8, 31 (1971).

    Google Scholar 

  2. A. Y. Cho, J. Cryst. Growth, 201/202, 1 (1999).

    Google Scholar 

  3. A. I. Kurkan, T. A. Bannova, O. B. Koretskaya, et al., Elektronn. Promst, Nos. 1-2, 95 (1999).

    Google Scholar 

  4. V. V. Chaldyshev, M. A. Putyato, B. R. Semyagin, et al., Ibid., 154.

  5. V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasilyev, and V. V. Shashkin, Appl. Phys., No. 5, 70 (2000).

    Google Scholar 

  6. K. S. Zhuravlev, A. I. Toropov, T. S. Shamirzaev, et al., Tech. Phys. Lett., 25, No. 8, 595 (1999).

    Google Scholar 

  7. V. A. Gaisler, A. I. Toropov, A. K. Bakarov, et al., Tech. Phys. Lett., 25, No. 10, 775 (1999).

    Google Scholar 

  8. A. I. Yakimov, C. J. Adkins, R. Boucher, et al., Phys. Rev., B59, No. 19, 12598 (1999).

    Google Scholar 

  9. Yu. G. Sidorov, S. A. Dvoretskii, V. S. Varavin, and N. N. Mikhailov, in: IR Matrix Photodetectors [in Russian], Nauka, Novosibirsk (2001), pp. 119–179.

    Google Scholar 

  10. V. V. Vasil'ev, Yu. G. Sidorov, S. A. Dvoretskii, et al., Avtometriya, No. 3, 4–8 (2001).

    Google Scholar 

  11. A. I. Yakimov, A. V. Dvurechenskii, and A. I. Nikiforov, Thin Solid Films, 380, Nos. 1-2, 82 (2001).

    Google Scholar 

  12. A. V. Dvurechenskii, I. A. Ryazantsev, A. P. Kovchavtsev, et al., Prikl. Fiz., No. 2, 69 (2003).

    Google Scholar 

  13. O. P. Pchelyakov, A. I. Nikiforov, L. V. Sokolov, et al., in: Proc. 10th Symp. Physical Sciences in Microgravity, Vol. II, St. Petersburg (1997), p. 144.

    Google Scholar 

  14. A. Ignatiev, Earth Space Rev., 10, 2 (1995).

    Google Scholar 

  15. V. I. Berzhatyi, L. L. Zvorykin, A. I. Ivanov, et al., Avtomat. Svarka, No. 10, 108 (1999).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences, Russia

    A. L. Aseev, O. P. Pchelyakov & A. I. Toropov

Authors
  1. A. L. Aseev
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O. P. Pchelyakov
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. I. Toropov
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Aseev, A.L., Pchelyakov, O.P. & Toropov, A.I. Physics and Technology of III–V Heterostructures: Current Status and Trends in the Development. Russian Physics Journal 46, 552–558 (2003). https://doi.org/10.1023/B:RUPJ.0000008180.02939.53

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:RUPJ.0000008180.02939.53

Keywords

Search

Navigation