Skip to main content
SpringerLink
Log in

Neutron-Transmutation Doping and Radiation Modification of Semiconductors: Current Status and Outlook

  • Published:
Russian Physics Journal Aims and scope

Abstract

This review focuses on the development of neutron-transmutation doping (NTD) and radiation modification (RM) technologies for semiconductor materials (Si and III–V compounds) in Russia. The advantages of NTD and RM materials over growth-doped semiconductors are demonstrated. The main tasks and outlook for the development of radiation technologies based on research and commercial RBMK-reactors operated in Russia are discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. J. M. Meese, ed., Neutron Transmutation Doping in Semiconductors, New York (1979).

  2. G. P. Kekelidze and V. I. Shakhovtsov, eds., Proc. Int. Conf. Radiation Physics of Semiconductors and Related Materials, Tbilisi (1980).

  3. L. S. Smirnov, S. P. Solov'ev, V. F. Stas', et al., Semiconductor Doping by Nuclear Reactions [in Russian], Nauka, Novosibirsk (1981).

    Google Scholar 

  4. V. N. Mordkovitch, ed., Neutron-Transmutation Doping of Semiconductors [Russian translation], Mir, Moscow (1982).

    Google Scholar 

  5. N. G. Kolin, S. P. Solov'ev, and A. A. Stuk, Izv. Vyssh. Uchebn. Zaved., Yad. Energ., Nos. 2-3, 98–110 (1991).

    Google Scholar 

  6. N. G. Kolin, S. P. Solov'ev, and A. A. Stuk, Nauka-Proizv., No. 2 (15), 44–52 (1999).

    Google Scholar 

  7. V. V. Kozlovskyi, L. F. Zakharenkov, and B. A. Shustrov, Fiz. Tekh. Poluprovodn., 26, No. 1, 3–21 (1992).

    Google Scholar 

  8. B. I. Boltax, T. V. Mashovets, and A. N. Orlov, eds., Point Defects in Solids [Russian translation], Mir, Moscow (1979).

    Google Scholar 

  9. L. S. Smirnov, ed., Problems of Radiation Technology of Semiconductors [in Russian], Nauka, Novosibirsk (1980).

    Google Scholar 

  10. L. S. Smirnov, ed., Radiation Effects in Semiconductors [in Russian], Nauka, Novosibirsk (1979).

    Google Scholar 

  11. E. R. Astvatsatur'n, D. V. Gromov, and V. M. Lomako, Radiation Effects in GaAs-Based Instruments and Chips [in Russian], Universitetskoe, Minsk (1992).

    Google Scholar 

  12. V. N. Brudnyi, V. V. Peshev, and A. P. Surzhikov, Formation of Radiation Defects in Electrical Fields (Gallium Arsenide and Indium Phosphide) [in Russian], Nauka, Novosibirsk (2001).

    Google Scholar 

  13. N. G. Kolin, A. V. Markov, V. B. Osvenskyi, et al., Fiz. Khim. Obrab. Mater., No. 1, 3–9 (1985).

    Google Scholar 

  14. N. G. Kolin, V. T. Bublik, V. B. Osvenskyi, et al., Fiz. Khim. Obrab. Mater., No. 3, 28–33 (1987).

    Google Scholar 

  15. L. I. Kolesnik, N. G. Kolin, A. M. Loshchinskii, et al., Fiz. Tekh. Poluprovodn., 19, No. 7, 1211–1216 (1985).

    Google Scholar 

  16. N. G. Kolin, V. B. Osvenskyi, V. V. Tokarevskii, et al., Fiz. Tekh. Poluprovodn., 19, No. 9, 1558–1565 (1985).

    Google Scholar 

  17. N. G. Kolin, V. B. Osvenskyi, N. S. Rytova, et al., Fiz. Khim. Obrab. Mater., No. 6, 3–8 (1986).

    Google Scholar 

  18. V. N. Brudnyi, N. G. Kolin, V. A. Novikov, et al., Phys. Status Solidi, A93, No. 1, 195–200 (1986).

    Google Scholar 

  19. N. G. Kolin, V. B. Osvenskyi, N. S. Rytova, et al., Fiz. Tekh. Poluprovodn., 20, No. 5, 822–827 (1986).

    Google Scholar 

  20. N. G. Kolin, T. I. Kolchenko, and V. M. Lomako, Fiz. Tekh. Poluprovodn., 21, No. 2, 327–330 (1987).

    Google Scholar 

  21. N. G. Kolin, V. B. Osvenskyi, N. S. Rytova, et al., Fiz. Tekh. Poluprovodn., 21, No. 3, 521–524 (1987).

    Google Scholar 

  22. N. G. Kolin, V. B. Osvenskyi, N. S. Rytova, et al., Fiz. Khim. Obrab. Mater., No. 4, 4–8 (1987).

    Google Scholar 

  23. R. M. Gloriozova, L. I. Kolesnik, N. G. Kolin, et al., Fiz. Tekh. Poluprovodn., 22, No. 3, 507–509 (1988).

    Google Scholar 

  24. F. P. Korshunov, N. G. Kolin, T. A. Prokhorenko, et al., Dokl. Akad. Nauk BSSR, 31, No. 8, 695–698 (1987).

    Google Scholar 

  25. N. G. Kolin, L. V. Kulikova, and V. B. Osvenskyi, Fiz. Tekh. Poluprovodn., 22, No. 6, 1025–1030 (1988).

    Google Scholar 

  26. F. P. Korshunov, N. G. Kolin, N. A. Sobolev, et al., Fiz. Tekh. Poluprovodn., 22, No. 10, 1850–1852 (1988).

    Google Scholar 

  27. N. G. Kolin, I. A. Koroleva, A. V. Markov, et al., Fiz. Tekh. Poluprovodn., 24, No. 1, 187–189 (1990).

    Google Scholar 

  28. V. N. Brudnyi, D. L. Budnitskyi, N. G. Kolin, et al., Izv. Vyssh. Uchebn. Zaved., Fiz., 34, No. 4, 45–51 (1991).

    Google Scholar 

  29. D. L. Budnitskyi, N. G. Kolin, et al., Izv. Vyssh. Uchebn. Zaved., Fiz Ibid., 34, No. 4, 82–86 (1991).

    Google Scholar 

  30. V. N. Brudnyi, I. V. Kamenskaya, and N. G. Kolin, Izv. Vyssh. Uchebn. Zaved., Fiz., 34, No. 7, 99–104 (1991).

    Google Scholar 

  31. Ibid., 35, No. 10, 61–66 (1992).

    Google Scholar 

  32. V. N. Brudnyi, N. G. Kolin, A. I. Potapov, Fiz. Tekh. Poluprovodn., 27, No. 2, 260–264 (1993).

    Google Scholar 

  33. T. N. Zairseva, N. G. Kolin, O. L. Kukhto, et al., Fiz. Tekh. Poluprovodn., 28, No. 11, 2041–2044 (1994).

    Google Scholar 

  34. T. N. Zaitseva, N. G. Kolin, O. L. Kukhto, et al., Prib. Tekh. Eksp., No. 3, 201–204 (1995).

    Google Scholar 

  35. V. N. Brudnyi, N. G. Kolin, V. V. Peshev, et al., Fiz. Tekh. Poluprovodn., 31, No. 7, 811–815 (1997).

    Google Scholar 

  36. V. N. Brudnyi, N. G. Kolin, D. I. Merkurisov, et al., Fiz. Tekh. Poluprovodn., 35, No. 6, 739–744 (2001).

    Google Scholar 

  37. V. N. Brudnyi, N. G. Kolin, and A. I. Potapov, Fiz. Tekh. Poluprovodn., 37, No. 4, 408–413 (2003).

    Google Scholar 

  38. N. G. Kolin, L. V. Kulikova, V. B. Osvenskyi, et al., Fiz. Tekh. Poluprovodn., 18, No. 12, 2187–2192 (1984).

    Google Scholar 

  39. V. N. Brudnyi, N. G. Kolin, V. A. Novikov, Phys. Status Solidi, A132, No. 1, 35 (1992).

    Google Scholar 

  40. Xiang-e Wen, Shi-qing Li, Li Ma, He-ping Yan, et al., Wuhan Univ. J. Nat. Sci., 4, No. 3, 290 (1999).

    Google Scholar 

  41. N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev, Fiz. Tekh. Poluprovodn., 33, No. 7, 774–777 (1999).

    Google Scholar 

  42. Ibid., 33, No. 8, 927–930 (1999).

    Google Scholar 

  43. D. I. Merkurisov, and S. P. Solov'ev, Fiz. Tekh. Poluprovodn. Ibid., 34, No. 2, 153–156 (2000).

  44. D. I. Merkurisov, and S. P. Solov'ev, Fiz. Tekh. Poluprovodn. Ibid., 34, No. 2, 157–161 (2000).

  45. N. G. Kolin, D. I. Merkurisov, and S. P. Solov'ev, Physica, B307, 258–264 (2001).

    Google Scholar 

  46. V. I. Fistul, Heavily Doped Semiconductors [Russian translation], Nauka, Moscow (1967).

    Google Scholar 

  47. N. G. Kolin and S. P. Solov'ev, in: Proc. 8th Int. Workshop on Radiation Physics of Solids, Sevastopol' (1998), pp. 432–434.

  48. G. V. Isenshtadt, M. V. Ardyshev, N. G. Kolin, et al., Elektr. Promst. Nauka. Technol. Izdel., Nos. 2/3, 69–72 (2002).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Obninsk Branch of the L. Ya. Karpov Federal Unitary Enterprise Scientific-Research Institute of Physical Chemistry, Russia

    N. G. Kolin

Authors
  1. N. G. Kolin
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kolin, N.G. Neutron-Transmutation Doping and Radiation Modification of Semiconductors: Current Status and Outlook. Russian Physics Journal 46, 543–551 (2003). https://doi.org/10.1023/B:RUPJ.0000008179.43324.96

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:RUPJ.0000008179.43324.96

Keywords

Search

Navigation