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Semiconductor Detectors, Mixers, and Frequency Multipliers for the Terahertz Band

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Radiophysics and Quantum Electronics Aims and scope

Abstract

The state of the art in the development of semiconductor detectors, mixers, and frequency multipliers based on Schottky-barrier diodes (SBDs) and heterojunction structures for uncooled terahertz receivers is reviewed. The present status of this field features a transition from quasi-optical designs based on dot-matrix, whisker-contacted SBDs to the designs with hybrid-integrated and monolithic constructions on the planar SBD base, which are positioned in a waveguide mount. The high-level performance of these planar devices is achieved by partially or completely removing or changing semiconductor substrates and/or using membrane constructions incorporated in the waveguide.

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  1. Federal State Enterprise — Research Institute of Semiconductor Devices, Tomsk, Russia

    V. G. Bozhkov

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Bozhkov, V.G. Semiconductor Detectors, Mixers, and Frequency Multipliers for the Terahertz Band. Radiophysics and Quantum Electronics 46, 631–656 (2003). https://doi.org/10.1023/B:RAQE.0000024993.40125.2b

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