Abstract
Laboratory equipment for measuring ultralow-frequency current noise of semiconductor gas-sensitive layers in the 10–6–1 Hz frequency band in the 20–450°C temperature range for different contents of the gaseous phase and various bias voltages (transport currents) is described. A procedure for making the measurements and for estimating their errors is presented.
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Ugryumov, R.B., Shaposhnik, A.V. & Voishchev, V.S. Apparatus for Measuring Ultralow-Frequency Noise in Semiconductor Gas-Sensitive Structures. Measurement Techniques 47, 706–711 (2004). https://doi.org/10.1023/B:METE.0000043660.69366.71
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DOI: https://doi.org/10.1023/B:METE.0000043660.69366.71