Abstract
Results of investigation of the quality of cleaning of the surfaces of silicon, silicon dioxide, and aluminum films with the use of rapid heat treatment prior to the application of a photoresist and the influence of such cleaning on the deviation of the linear dimensions of a topological pattern subjected to etching are presented. All the results are considered in comparison to the traditional methods of surface cleaning. The parameters of the elements of very large‐scale integrated circuits manufactured with the use of rapid heat treatment for cleaning of the surfaces of various thin‐film materials coated on silicon are presented.
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REFERENCES
V. M. Anishchik, V. A. Gorushko, V. A. Pilipenko, V. N. Ponomar', V. V. Ponaryadov, V. A. Ukhov, and G. G. Chigir', in: Physical Principles of Rapid Heat Treatment. Annealing of Polycrystalline Silicon, Dielectric Films, Cleaning of a Surface, and Epitaxy[in Russian], Minsk (2000), pp. 49-54.
V. M. Anishchik, V. A. Gorushko, V. A. Pilipenko, V. N. Ponomar', V. V. Ponaryadov, and I. V. Pilipenko, in: Physical Principles of Rapid Heat Treatment. Temperature Fields and Structural Features of Equipment[in Russian], Minsk (2000), pp. 43-49.
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Pilipenko, V.A., Ponomar', V.N. & Gorushko, V.A. Cleaning of the Surface of Silicon Structures in the Technology of Very Large‐Scale Integrated Circuits with the Use of Rapid Heat Treatment. Journal of Engineering Physics and Thermophysics 76, 1075–1079 (2003). https://doi.org/10.1023/B:JOEP.0000003222.73218.a0
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DOI: https://doi.org/10.1023/B:JOEP.0000003222.73218.a0