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Microstructure and PTCR effect of La-doped BaPbO3 ceramics

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Abstract

La-doped BaPbO3 ceramics were prepared by using BaCO3 and PbO. Electrical properties and microstructure of the ceramics were studied. The results show a thin surface layer with a very low resistivity, and the interior of the ceramics with the characteristics of positive temperature coefficient of resistivity (PTCR). The PTCR behavior was related to the La content. The investigation by scanning electron microscopy and transmission electron microscopy revealed that the low resistivity of the surface layer was due to formation of a nano-size BaPbO3 phase with metallic properties.

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Authors and Affiliations

  1. Division of Ceramics, Department of Materials Science and Engineering, Royal Institute of Technology, S 100 44, Stockholm, Sweden and

    Zhi Cheng Li & Bill Bergman

  2. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, People's Republic of China

    Zhi Cheng Li & Hong Zhang

Authors
  1. Zhi Cheng Li
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  2. Hong Zhang
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  3. Bill Bergman
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Li, Z.C., Zhang, H. & Bergman, B. Microstructure and PTCR effect of La-doped BaPbO3 ceramics. Journal of Materials Science: Materials in Electronics 15, 183–186 (2004). https://doi.org/10.1023/B:JMSE.0000011359.68323.65

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  • DOI: https://doi.org/10.1023/B:JMSE.0000011359.68323.65

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