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Properties of transparent conducting ZnO : Al oxide thin films and their application for molecular organic light-emitting diodes

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Abstract

ZnO : Al (ZAO) films were deposited on glass substrates by a reactive mid-frequency sputtering system. The microstructural, electrical, and optical properties of ZAO films were investigated. It was observed that the polycrystalline film was (0 0 2n) textured with columnar structure. The minimum resistivity was 1.39×10−4 Ω cm with a carrier concentration of 1.58×1021 cm−3 and a Hall mobility of 28.2 cm2 V−1 s−1, correspondingly with the c-axis nearly equal to the value of ZnO powder and the minimum mechanical stress therein. The average transmittance of 80.8% in the visible range and infrared reflectance of over 86% in the 1600–4400 cm−1 interval were obtained. The ZAO films were used as the transparent anodes to fabricate light-emitting diodes, and a luminance efficiency of 2.09 cd A−1 was measured at a current density of 5.38 A m−2.

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Authors and Affiliations

  1. Department of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, People's Republic of China

    H. T. Cao, C. Sun, Z. L. Pei, A. Y. Wang & L. S. Wen

  2. Fraunhofer Institute for Surface Engineering and Thin Films, Bienroder Weg 54E, D-38108, Braunschweig, Germany

    R. J. Hong & X. Jiang

Authors
  1. H. T. Cao
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  2. C. Sun
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  3. Z. L. Pei
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  4. A. Y. Wang
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  5. L. S. Wen
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  6. R. J. Hong
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  7. X. Jiang
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Cao, H.T., Sun, C., Pei, Z.L. et al. Properties of transparent conducting ZnO : Al oxide thin films and their application for molecular organic light-emitting diodes. Journal of Materials Science: Materials in Electronics 15, 169–174 (2004). https://doi.org/10.1023/B:JMSE.0000011357.32981.47

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  • DOI: https://doi.org/10.1023/B:JMSE.0000011357.32981.47

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