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Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

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Authors and Affiliations

  1. Department of Physics, Dongguk University, 3-26, Pildong, Chungku, Seoul, 100-715, Korea

    S. H. Park & T. W. Kang

  2. Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea

    T. W. Kim

Authors
  1. S. H. Park
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  2. T. W. Kang
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  3. T. W. Kim
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Correspondence to T. W. Kang.

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Park, S.H., Kang, T.W. & Kim, T.W. Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates. Journal of Materials Science 39, 3217–3219 (2004). https://doi.org/10.1023/B:JMSC.0000025864.93045.5f

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