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Transition from in-plane to perpendicular magnetization in GdFeCo/AlN/TbFeCo magnetostatic coupling films

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Authors and Affiliations

  1. Laboratory of Photo-Electronic Material, Ningbo University, Zhejiang, 315211, People's Republic of China; Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China

    Yuepin Zhang & Haiping Xia

  2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, People's Republic of China

    Xianying Wang, Defang Shen & Fuxi Gan

  3. Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China

    Zuoyi Li

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  1. Yuepin Zhang
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  2. Xianying Wang
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  3. Haiping Xia
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  4. Zuoyi Li
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  5. Defang Shen
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  6. Fuxi Gan
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Zhang, Y., Wang, X., Xia, H. et al. Transition from in-plane to perpendicular magnetization in GdFeCo/AlN/TbFeCo magnetostatic coupling films. Journal of Materials Science 39, 2233–2236 (2004). https://doi.org/10.1023/B:JMSC.0000017796.96402.2c

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