Abstract
Growth of Cu films on (0001)Al2O3 substrates can result in metallic Cu—Al or ionic-covalent Cu—O bonds at atomically abrupt interfaces. The type of bonding depends on the substrate cleaning procedure prior to film growth. Cu films deposited on Ar+-ion sputter-cleaned substrates exhibit interfacial Cu-L2,3, Al-L2,3 and O-K energy-loss near-edge structures that indicate the formation of metallic Cu—Al bonds at the Cu/Al2O3 interface. In contrast, growth on chemically cleaned α-Al2O3 substrates results in interfacial energy-loss near-edge structures that suggest Cu—O bonding at the interface. The experimental electron energy-loss spectroscopic results are compared to calculated spectra, and the mechanisms causing the changes in the atomic and electronic structure are addressed.
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Scheu, C. Manipulating Bonding at a Cu/(0001)Al2O3 Interface by Different Substrate Cleaning Processes. Interface Science 12, 127–134 (2004). https://doi.org/10.1023/B:INTS.0000012304.56861.68
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DOI: https://doi.org/10.1023/B:INTS.0000012304.56861.68