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Preparation and Structure of Ga2 – x Sc x O3 (0.42 ≤ x ≤ 0.52)

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Abstract

The structure of a scandium gallium oxide single crystal grown by the Czochralski process from a charge of composition Ga1.5Sc0.5O3 is determined by x-ray diffraction. The structure is shown to be a superstructure to β-Ga2O3. The superstructure parameters are found to vary both along the axis of the crystal and radially, which is due to variations in Ga : Sc ratio. A structural model of the Ga1.5Sc0.5O3 crystal is proposed.

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Authors and Affiliations

  1. Lomonosov State Academy of Fine Chemical Technology, pr. Vernadskogo 86, Moscow, 117571, Russia

    G. M. Kuz'micheva

  2. Moscow State University, Moscow, 119899, Russia

    V. B. Rybakov

  3. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    S. A. Kutovoi

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  1. G. M. Kuz'micheva
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  2. V. B. Rybakov
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  3. S. A. Kutovoi
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Kuz'micheva, G.M., Rybakov, V.B. & Kutovoi, S.A. Preparation and Structure of Ga2 – x Sc x O3 (0.42 ≤ x ≤ 0.52). Inorganic Materials 40, 1066–1069 (2004). https://doi.org/10.1023/B:INMA.0000046469.54721.1a

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  • DOI: https://doi.org/10.1023/B:INMA.0000046469.54721.1a

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