Abstract
Raman spectra attest to a high structural perfection of undoped diamond prepared via hydrocarbon decomposition and good quality of boron-doped diamond at doping levels below 0.01 at %. The Fano resonance observed on the first-order Raman scattering peak points to metallic conduction in diamond containing more than 0.1 at % B. The plot of the width of the Raman peak against its frequency shows a jump between 0.04 and 0.1 at % B. Therefore, the transition from semiconducting behavior of diamond to metallic conduction results in an additional contribution to the scattering of phonons, which comes from free carriers. The agreement between the data for boron-doped (0.01–0.1 at %) and neutron-irradiated diamonds lends support to the assumption that, at doping levels above 0.01 at %, boron may be incorporated into diamond interstitially.
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REFERENCES
Custers, J.F.H., Semiconductivity of a Type IIb Diamond, Nature (London), 1955, vol. 176, no. 4473, pp. 173–174.
Landolt, H. and Börnstein, R., New Series Group III: Crystal and Solid State Physics, vol. 17: Semiconduc-tors, subvol. a: Physics of Group IV Elements and III–V Compounds, New York: Springer, 1987, p. 37.
Yakovlev, E.N., Voronov, O.A., and Rakhmanina, A.V., Synthesis of Diamond from Hydrocarbons, Sverkhtverd. Mater., 1984, no. 4, pp. 8–11.
Voronov, O.A. and Rakhmanina, A.V., Cubic Cell Parameter of Boron-Doped Diamond, Neorg. Mater., 1993, vol. 29, no. 5, pp. 623–626 [Inorg. Mater. (Engl. Transl.), vol. 29, no. 5, pp. 533–535].
Serebryanaya, N.R., Losev, V.G., Voronov, O.A., et al., Morphology of Diamond Crystals Synthesized from Hydrocarbons, Kristallografiya, 1985, vol. 30, no. 5, pp. 1026–1027.
Nachal'naya, T.Ya., Podzyarei, G.A., Shul'man, et al., ESR Spectra of Diamonds Synthesized from Hydrocarbons, Fiz. Tekh. Vys. Davlenii, 1986, vol. 18, no. 21, pp. 40–42.
Fano, U., Effect of Configuration Interaction on Intensi-ties and Phase Shifts, Phys. Rev., 1961, vol. 124, no. 6, pp. 1866–1878.
Prirodnye almazy Rossii (Natural Diamonds of Russia), Kvaskov, V.B., Ed., Moscow: Polyaron, 1997.
Gonon, P., Gheeraert, E., Deneuville, A., and Fontaine, F., Characterization of Heavily B-Doped Polycrystalline Diamond Films Using Raman Spectroscopy and Electron Spin Resonance, J. Appl. Phys., 1995, vol. 78, no. 12, pp. 7059–7062.
Watanabe, K., Ushizawa, K., Ando, T., et al., Polarization Dependence of Raman Scattering Spectra from Heavily Boron Doped CVD Diamond, Proc. IX NIRIM Int. Symp., Tsukuba, 2002, pp. 99–100.
Cerdeira, F., Fjeldly, T.A., and Cardona, M., Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped p-Type Si: II. Optical Modes, Phys. Rev. B: Solid State, 1973, vol. 8, no. 10, pp. 4734–4745.
Ager III, J.W., Walukiewicz, W., McCluskey, M., et al., Fano Interference of the Raman Phonon in Heavily Boron-Doped Diamond Films Grown by Chemical Vapor Deposition, Appl. Phys. Lett., 1995, vol. 66, no. 5, pp. 616–618.
Massarani, B., Bourboin, J.C., and Chrenko, R.M., Hopping Conduction in Semiconducting Diamond, Phys. Rev. B: Solid State, 1978, vol. 17, no. 4, pp. 1758–1769.
Davydov, V.A., Eremets, M.I., Revin, O.G., and Struzh-kin, V.V., Impurity Absorption Spectra and Activation Energy of Conduction of p-Type Synthetic Diamonds, Sverkhtverd. Mater., 1990, no. 2, pp. 8–13.
Davydov, V.A., Eremets, M.I., Revin, O.G., and Struzh-kin, V.V., Optical Properties of Semiconducting Synthetic Diamonds with Different Impurity Compositions, in Opticheskaya spektroskopiya i elektronnyi paramag-nitnyi rezonans primesei i defektov v almaze (Optical Spectroscopy and Electron Spin Resonance of Impurities and Defects in Diamond), Kiev: Inst. Sverkhtverdykh Materialov Akad. Nauk Ukr. SSR, 1986, pp. 28–33.
Lagrange, J.-P., Deneuville, A., and Greerart, E.A., Large Range of Boron with Low Compensation Ratio for Homoepitaxial Diamond Films, Carbon, 1999, vol. 37, pp. 807–810.
Brunet, F., Germi, P., Deneuville, A., et al., The Effect of Boron Doping on the Lattice Parameter of Homoepitaxial Diamond Films, Diamond Relat. Mater., 1998, vol. 7, pp. 869–873.
Liu, M.S., Bursill, L.A., and Prawer, S., Temperature Dependence of the First-Order Raman Phonon Line of Diamond, Phys. Rev. B: Condens. Matter, 2000, vol. 61, no. 5, pp. 3391–3395.
Debernardi, A., Baroni, S., and Molinari, E., Anhar-monic Phonon Lifetime in Semiconductors from Density-Functional Perturbation Theory, Phys. Rev. Lett., 1995, vol. 75, pp. 1819–1822.
Widulle, F., Serrano, J., and Cardona, M., Disorder-Induced Phonon Self-energy of Semiconductors with Binary Isotopic Composition, Phys. Rev. B: Condens. Matter, 2002, vol. 65, p. 075 206 (1–10).
Hanzawa, H., Umemura, N., Nisida, Y., et al., Disorder Effects of Nitrogen Impurities, Irradiation-Induced Defects, and C13 Isotope Composition on the Raman Spectrum in Synthetic Ib Diamond, Phys. Rev. B: Condens. Matter, 1996, vol. 54, no. 6, pp. 3793–3799.
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Utyuzh, A.N., Timofeev, Y.A. & Rakhmanina, A.V. Effect of Boron Impurity on the Raman Spectrum of Synthetic Diamond. Inorganic Materials 40, 926–931 (2004). https://doi.org/10.1023/B:INMA.0000041323.35298.dd
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DOI: https://doi.org/10.1023/B:INMA.0000041323.35298.dd