Abstract
CdSe, CdTe, and CdTe x Se1 – x nanostructures were grown on silicon substrates with different orientations by atomic layer deposition. The general mechanisms of Cd, Se, and Te chemisorption and nanostructure growth were elucidated, and the conditions for layer-by-layer growth were identified.
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Ezhovskii, Y.K., Mikhaevich, D.P. Growth of CdSe- and CdTe-Based Nanostructures on Silicon. Inorganic Materials 40, 909–913 (2004). https://doi.org/10.1023/B:INMA.0000041319.30903.c9
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DOI: https://doi.org/10.1023/B:INMA.0000041319.30903.c9