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Preparation and Properties of Thin InSb〈Te〉 Layers on Al2O3

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Abstract

Thin layers of Te-doped indium antimonide are produced on Al2O3 substrates by directional solidification. The effective distribution coefficient of Te is determined, and the electrical properties (resistivity, carrier mobility, and carrier concentration) of the layers are studied in the range 77–300 K. The mechanisms of carrier scattering governing the electrical properties of the layers are discussed.

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Authors and Affiliations

  1. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, Leninskii pr. 31, Moscow, 119991, Russia

    O. N. Pashkova & A. V. Steblevskii

  2. Institute of Physicochemical Problems in Ceramic Science, Russian Academy of Sciences, Ozernaya ul. 48, Moscow, 119361, Russia

    A. G. Padalko

Authors
  1. O. N. Pashkova
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  2. A. G. Padalko
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  3. A. V. Steblevskii
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Pashkova, O.N., Padalko, A.G. & Steblevskii, A.V. Preparation and Properties of Thin InSb〈Te〉 Layers on Al2O3 . Inorganic Materials 40, 897–900 (2004). https://doi.org/10.1023/B:INMA.0000041316.95257.f9

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  • DOI: https://doi.org/10.1023/B:INMA.0000041316.95257.f9

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