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Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition

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Abstract

The Zn profile in Al x Ga1 – x As/GaAs (x = 0.2–0.4) quantum-well heteroepitaxial structures doped during growth by metalorganic chemical vapor deposition is modeled with allowance made for the diffusional broadening of the nominal doping profile. Experimentally determined carrier distributions in the heterostructures are used to refine the diffusion coefficient of Zn at a growth temperature of 770°C. The average value of D Zn is determined to be ∼6.0 × 10–14 cm2/s. The position of the p–n junction in Al x Ga1 – x As/GaAs heterostructures is assessed as a function of the nominal Zn profile and growth rate. The ways of optimizing the doping profile are outlined.

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Authors and Affiliations

  1. Lomonosov State Academy of Fine Chemical Technology, pr. Vernadskogo 86, Moscow, 117571, Russia

    R. Kh. Akchurin

  2. OAO Sigm Plyus, ul. Vvedenskogo 3, Moscow, 117342, Russia

    A. Yu. Andreev, P. V. Bulaev, I. D. Zalevskii, A. A. Marmalyuk, D. B. Nikitin & A. A. Padalitsa

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  1. R. Kh. Akchurin
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  2. A. Yu. Andreev
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  3. P. V. Bulaev
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  4. I. D. Zalevskii
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  5. A. A. Marmalyuk
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  6. D. B. Nikitin
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  7. A. A. Padalitsa
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Akchurin, R.K., Andreev, A.Y., Bulaev, P.V. et al. Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition. Inorganic Materials 40, 787–790 (2004). https://doi.org/10.1023/B:INMA.0000037920.53242.0a

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  • DOI: https://doi.org/10.1023/B:INMA.0000037920.53242.0a

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