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Determination of Impurities in Monoisotopic Silicon Tetrafluoride

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Abstract

The impurity contents of different silicon tetrafluoride samples (isotopically unmodified and enriched) are determined by optical emission spectroscopy with the preconcentration of nonvolatile impurities by distilling off SiF4 .

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Authors and Affiliations

  1. Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, ul. Tropinina 49, Nizhni Novgorod, 603950, Russia

    A. D. Bulanov & V. G. Pimenov

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  1. A. D. Bulanov
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  2. V. G. Pimenov
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Bulanov, A.D., Pimenov, V.G. Determination of Impurities in Monoisotopic Silicon Tetrafluoride. Inorganic Materials 40, 754–759 (2004). https://doi.org/10.1023/B:INMA.0000034777.13686.f8

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  • DOI: https://doi.org/10.1023/B:INMA.0000034777.13686.f8

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