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Photoluminescence of Rare-Earth-Doped InSe and GaSe Single Crystals

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Inorganic Materials Aims and scope

Abstract

The effect of doping with Gd, Ho, and Dy (10–5 to 10–1 at %) on the photoluminescence behavior (intensity and shape of the spectrum) of single crystals of the layered compounds InSe and GaSe is studied in the range 77–300 K. It is shown that, in both selenides, photoluminescence is of excitonic nature.

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Authors and Affiliations

  1. Rasul-zade State University, ul. Khalilova 23, Baku, 370144, Azerbaijan

    A. Sh. Abdinov, R. F. Babaeva, R. M. Rzaev & G. A. Gasanov

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  1. A. Sh. Abdinov
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  2. R. F. Babaeva
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  3. R. M. Rzaev
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  4. G. A. Gasanov
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Abdinov, A.S., Babaeva, R.F., Rzaev, R.M. et al. Photoluminescence of Rare-Earth-Doped InSe and GaSe Single Crystals. Inorganic Materials 40, 567–569 (2004). https://doi.org/10.1023/B:INMA.0000031987.03089.a8

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  • DOI: https://doi.org/10.1023/B:INMA.0000031987.03089.a8

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