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Effect of Tellurium Doping on the Structural Perfection of ZnSe

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Inorganic Materials Aims and scope

Abstract

Isovalent doping with Te is shown to have an advantageous effect on the structural perfection of ZnSe crystals, causing the wurtzite–sphalerite phase transition to reach completion. The optimum Te content of ZnSe crystals is 0.3–0.6 wt %. According to x-ray diffraction results, ZnSe1 – x Te x crystals doped with less than 0.3 wt % Te contain twins and stacking faults. Doping with ≥0.6 wt % Te leads to tetragonal distortions of the ZnSe lattice.

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Authors and Affiliations

  1. Institute of Single Crystals, National Academy of Sciences of Ukraine, pr. Lenina 60, Kharkov, 61001, Ukraine

    L. V. Atroshchenko, E. F. Voronkin, S. N. Galkin, A. I. Lalayants, I. A. Rybalka, V. D. Ryzhikov & A. G. Fedorov

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  1. L. V. Atroshchenko
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  2. E. F. Voronkin
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  3. S. N. Galkin
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  4. A. I. Lalayants
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  5. I. A. Rybalka
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  6. V. D. Ryzhikov
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  7. A. G. Fedorov
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Atroshchenko, L.V., Voronkin, E.F., Galkin, S.N. et al. Effect of Tellurium Doping on the Structural Perfection of ZnSe. Inorganic Materials 40, 563–566 (2004). https://doi.org/10.1023/B:INMA.0000031986.35850.72

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  • DOI: https://doi.org/10.1023/B:INMA.0000031986.35850.72

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