Skip to main content
SpringerLink
Log in

Reaction of Ge with NH3 + H2O Vapor

  • Published:
Inorganic Materials Aims and scope

Abstract

A formal rate equation is derived for the asymptotic growth of a vaporizing scale, which adequately describes the growth of a nitride layer on germanium in humid ammonia.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. Arslambekov, V.A., General Trends in Reactions of Metals and Semiconductors with Corrosive Gases, Doctoral (Chem.) Dissertation, Moscow: Inst. of Physical Chemistry, Russ. Acad. Sci., 1979, p. 447.

    Google Scholar 

  2. Wajzel, D., A Method for Calculating Paralinear Constants for the Formation of Volatile Scale, J. Electrochem. Soc., 1963, vol. 110, no. 6, pp. 504-507.

    Google Scholar 

  3. Jones, E.S., Mosher, J.F., Speiser, R., and Spretnak, J.W., The Oxidation of Molybdenum, Corrosion (Houston), 1958, vol. 14, no. 1, pp. 20-26.

    Google Scholar 

  4. Frantsevich, I.N., Voitovich, R.F., and Lavrenko, V.A., Vysokotemperaturnoe okislenie metallov i splavov (High-Temperature Oxidation of Metals and Alloys), Kiev: Gos. Izd. Tekh. Literatury USSR, 1963, p. 321.

    Google Scholar 

  5. Ruddlesden, S. and Popper, P., On the Crystal Structures of the Nitrides of Silicon and Germanium, Acta Crystallogr., 1958, vol. 11, pp. 465-469.

    Google Scholar 

  6. Nakhutsrishvili, I.G., Mogilyanskii, D.N., and Dzhishiashvili, D.A., Preparation of the α-and β-Forms of Germanium Nitride, Neorg. Mater., 1994, vol. 30, no. 12, pp. 1504-1506 [Inorg. Mater. (Engl. Transl.), vol. 30, no. 12, pp. 1403-1405].

    Google Scholar 

  7. Nakhutsrishvili, I.G., Dzhishiashvili, D.A., and Mkervalishvili, Z.I., Preparation of Germanium Oxynitride Films in Ammonia, Neorg. Mater., 2003, vol. 39, no. 8, pp. 971-973 [Inorg. Mater. (Engl. Transl.), vol. 39, no. 8, pp. 833-835].

    Google Scholar 

  8. Bayractaroglu, B., Johnson, R.L., Langer, D.W., and Mier, M.G., Germanium (Oxy)Nitride Based Surface Passivation Technique as Applied to GaAs and InP, Int. Topical Conf. on the Physics of MOS Insulators, North Carolina State Univ., 1980, pp. 207-211.

Download references

Author information

Authors and Affiliations

  1. Institute of Cybernetics, Academy of Sciences of Georgia, ul. Euli 5, Tbilisi, 380086, Georgia

    I. G. Nakhutsrishvili

Authors
  1. I. G. Nakhutsrishvili
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Nakhutsrishvili, I.G. Reaction of Ge with NH3 + H2O Vapor. Inorganic Materials 40, 494–496 (2004). https://doi.org/10.1023/B:INMA.0000027595.02173.e2

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:INMA.0000027595.02173.e2

Keywords

Search

Navigation