Abstract
Single-crystal and powder x-ray diffraction studies of compounds in the nATe · mBi2Te3 (A = Ge, Sn, Pb) homologous series in the pseudobinary systems ATe–Bi2Te3 reveal a marked dissimilarity of the GeTe–Bi2Te3 system from SnTe–Bi2Te3 and PbTe–Bi2Te3. The GeTe–Bi2Te3 system contains, along with GeBi2Te4 (n/m = 1), GeTe-rich (n/m > 1) and Bi2Te3-rich (n/m < 1) members of the nGeTe · mBi2Te3 series. In contrast, the Sn and Pb systems contain only Bi2Te3-rich compounds (n/m < 1). This dissimilarity is interpreted in terms of the crystal structures of GeTe, SnTe, and PbTe. The thermoelectric properties of nPbTe · mBi2Te3 compounds are studied in a broad temperature range. The thermoelectric figures of merit of unoptimized n-type PbBi4Te7 and PbBi2Te4 are ZT= 0.5 and 0.4 at 600 and 650 K, respectively. Comparison of the thermoelectric properties of the isostructural 12-layer compounds GeBi4Te7, SnBi4Te7, and PbBi4Te7 indicates that the maximum in thermopower shifts to higher temperatures in going from the Ge to Sn and Pb compounds.
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Shelimova, L.E., Karpinskii, O.G., Konstantinov, P.P. et al. Crystal Structures and Thermoelectric Properties of Layered Compounds in the ATe–Bi2Te3(A = Ge, Sn, Pb) Systems. Inorganic Materials 40, 451–460 (2004). https://doi.org/10.1023/B:INMA.0000027590.43038.a8
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DOI: https://doi.org/10.1023/B:INMA.0000027590.43038.a8