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Solid-State Reactions during Thermal Oxidation of Vanadium-Modified GaAs Surfaces

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Inorganic Materials Aims and scope

Abstract

It is shown that vanadium layers deposited by magnetron sputtering onto GaAs accelerate surface oxide growth during thermal oxidation. The processes occurring during thermal oxidation on the surface and at the semiconductor–metal interface are interpreted under the assumption that vanadium deposition leads to the formation of an interfacial V x Ga y As z layer, which plays a key role in determining the mechanism of V/GaAs oxidation.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    I. Ya. Mittova, E. V. Tomina, A. A. Lapenko & A. O. Khorokhordina

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  1. I. Ya. Mittova
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  2. E. V. Tomina
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  3. A. A. Lapenko
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  4. A. O. Khorokhordina
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Mittova, I.Y., Tomina, E.V., Lapenko, A.A. et al. Solid-State Reactions during Thermal Oxidation of Vanadium-Modified GaAs Surfaces. Inorganic Materials 40, 441–444 (2004). https://doi.org/10.1023/B:INMA.0000027588.78546.af

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  • DOI: https://doi.org/10.1023/B:INMA.0000027588.78546.af

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