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Growth and Properties of CdGa2S4 Single Crystals

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Abstract

CdGa2S4 single crystals were grown by the Bridgman–Stockbarger method and chemical vapor transport, and their composition, structure, morphology, and transport properties were studied. The crystals were used for the first time to produce In/CdGa2S4 surface-barrier structures and H2O/CdGa2S4 photoelectrochemical cells. The photoelectric properties of these devices were investigated in unpolarized and linearly polarized light.

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Authors and Affiliations

  1. Belarussian State University of Information Science and Radio Engineering, ul. Brovki 6, Minsk, 220027, Belarus

    I. V. Bodnar'

  2. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    V. Yu. Rud'

  3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud'

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  1. I. V. Bodnar'
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Bodnar', I.V., Rud', V.Y. & Rud', Y.V. Growth and Properties of CdGa2S4 Single Crystals. Inorganic Materials 40, 102–106 (2004). https://doi.org/10.1023/B:INMA.0000016081.55152.47

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  • DOI: https://doi.org/10.1023/B:INMA.0000016081.55152.47

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