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Effect of Bismuth Ions on the Optical Absorption in Gd3Ga5O12〈Bi〉 Epitaxial Films

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Abstract

Single-crystal gadolinium gallium garnet films containing Bi impurity are grown on (111) Gd3Ga5O12 substrates by liquid-phase epitaxy from Bi2O3–B2O3 fluxes. The absorption spectra of the films are measured from 0.2 to 1.5 μm. The effect of Bi3+ impurity on the optical absorption in the films is examined.

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    V. V. Randoshkin & N. V. Vasil'eva

  2. LAL Science and Production Company, 125502, Moscow, Russia

    A. V. Vasil'ev

  3. Fiber Optics Research Center, Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    V. G. Plotnichenko & Yu. N. Pyrkov

  4. Moscow State University, Moscow, 119899, Russia

    A. M. Saletskii, K. V. Stashun & N. N. Sysoev

Authors
  1. V. V. Randoshkin
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  2. N. V. Vasil'eva
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  3. A. V. Vasil'ev
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  4. V. G. Plotnichenko
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  5. Yu. N. Pyrkov
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  6. A. M. Saletskii
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  7. K. V. Stashun
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  8. N. N. Sysoev
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Randoshkin, V.V., Vasil'eva, N.V., Vasil'ev, A.V. et al. Effect of Bismuth Ions on the Optical Absorption in Gd3Ga5O12〈Bi〉 Epitaxial Films. Inorganic Materials 40, 54–58 (2004). https://doi.org/10.1023/B:INMA.0000012179.77320.ed

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  • DOI: https://doi.org/10.1023/B:INMA.0000012179.77320.ed

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