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Thermal Oxidation of Co/GaAs Structures

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Inorganic Materials Aims and scope

Abstract

The kinetics and mechanism of GaAs oxidation in Co/GaAs structures are studied. The interfacial transition layer is shown to influence Co/GaAs oxidation and to lead to predominant growth of cobalt arsenate. This improves the dielectric properties of the structure compared to the oxidation of free GaAs surfaces. A model for the thermal oxidation of Co/GaAs structures is proposed which takes into account the formation of an interfacial transition layer at the initial stages of oxidation.

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Authors and Affiliations

  1. Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006, Russia

    I. Ya. Mittova, E. V. Tomina, A. S. Sukhochev & A. O. Vasyukevich

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  1. I. Ya. Mittova
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  2. E. V. Tomina
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  3. A. S. Sukhochev
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  4. A. O. Vasyukevich
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Mittova, I.Y., Tomina, E.V., Sukhochev, A.S. et al. Thermal Oxidation of Co/GaAs Structures. Inorganic Materials 39, 1284–1287 (2003). https://doi.org/10.1023/B:INMA.0000008914.56903.be

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  • DOI: https://doi.org/10.1023/B:INMA.0000008914.56903.be

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