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Effect of Impurities on Crystal Growth of Gallium

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Inorganic Materials Aims and scope

Abstract

Sn, In, Cu, Ag, and Ge impurities (0.0001–0.1 wt %) are shown to have different effects on the surface morphology of Ga crystals. A mechanism is proposed which accounts for the behavior of Sn and In impurities during directional solidification of Ga.

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Authors and Affiliations

  1. Research Institute of Electronic Materials, ul. Gagarina 1, Kaluga, 248650, Russia

    S. A. Kozlov & N. A. Potolokov

  2. Russian Academy of Sciences, Institute of Chemistry of High-Purity Substances, ul. Tropinina 49, Nizhni Novgorod, 603950, Russia

    A. V. Gusev

  3. Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry, Leninskii pr. 31, Moscow, 119991, Russia

    V. A. Fedorov

Authors
  1. S. A. Kozlov
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  2. N. A. Potolokov
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  3. A. V. Gusev
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  4. V. A. Fedorov
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Kozlov, S.A., Potolokov, N.A., Gusev, A.V. et al. Effect of Impurities on Crystal Growth of Gallium. Inorganic Materials 39, 1267–1270 (2003). https://doi.org/10.1023/B:INMA.0000008911.23112.14

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  • DOI: https://doi.org/10.1023/B:INMA.0000008911.23112.14

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